Silicon wafer strain under local photonic annealing
نویسندگان
چکیده
منابع مشابه
Hydrophobic silicon wafer bonding
Wafers prepared by an HF dip without a subsequent water rinse were bonded at room temperature and annealed at temperatures up to 1100 “C. Based on substantial differences between bonded hydrophilic and hydrophobic Si wafer pairs in the changes of the interface energy with respect to temperature, secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM), we suggest that h...
متن کاملThin Silicon Wafer Device Concept with Advanced Laser Annealing and Sintering Process
A new anode/cathode design and process concept for thin wafer based silicon devices is proposed to achieve the goal of providing improved control for activating the injecting layer and forming a good ohmic contact. The concept is based on laser annealing in a melting regime of a p-type anode layer covered with a thin titanium layer with high melting temperature and high laser light absorption. ...
متن کاملLocal nanofluidic light sources in silicon photonic crystal microcavities.
We report on the realization of a rewritable and local source inside a Si-based photonic crystal microcavity by infiltrating a solution of colloidal PbS quantum dots inside a single pore of the structure. We show that the resulting spontaneous emission from the source is both spatially and spectrally redistributed due to the mode structure of the photonic crystal cavity. The coupling of the qua...
متن کاملLecture 21: Silicon wafer manufacturing
The first step in integrated circuit (IC) fabrication is preparing the high purity single crystal Si wafer. This is the starting input to the fab. Typically, Si wafer refers to a single crystal of Si with a specific orientation, dopant type, and resistivity (determined by dopant concentration). Typically, Si (100) or Si (111) wafers are used. The numbers (100) and (111) refers to the orientatio...
متن کاملHeterogeneous integration of lithium niobate and silicon nitride waveguides for wafer-scale photonic integrated circuits on silicon.
An ideal photonic integrated circuit for nonlinear photonic applications requires high optical nonlinearities and low loss. This work demonstrates a heterogeneous platform by bonding lithium niobate (LN) thin films onto a silicon nitride (Si3N4) waveguide layer on silicon. It not only provides large second- and third-order nonlinear coefficients, but also shows low propaga...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering
سال: 2019
ISSN: 2413-6387,1609-3577
DOI: 10.17073/1609-3577-2017-2-142-147